a p08p20gp-hf advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -200v simple drive requirement r ds(on) 680m fast switching characteristic i d -8a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice parameter drain-source voltage gate-source voltage drain current, v gs @ 10v -55 to 150 linear derating factor 96 thermal data parameter total power dissipation operating junction temperature range storage temperature range halogen-free product drain current, v gs @ 10v -5 pulsed drain current 1 30 1 rating -200 + 20 -8 0.77 -55 to 150 201501093 g d s g d s to-220(p) a p08p20 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package.
AP08P20GP-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -200 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 680 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -2 - -4 v g fs forward transconductance v ds =-10v, i d =-5a - 4 - s i dss drain-source leakage current v ds =-200v, v gs =0v - - -25 ua drain-source leakage current (t j =125 o c) v ds =-160v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-5a - 20 32 nc q gs gate-source charge v ds =-160v - 5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 13 - nc t d(on) turn-on delay time 2 v ds =-100v - 12 - ns t r rise time i d =-5a - 14 - ns t d(off) turn-off delay time r g =10 -64- ns t f fall time v gs =-10v - 28 - ns c iss input capacitance v gs =0v - 1210 - pf c oss output capacitance v ds =-25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 3.6 5.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-5a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-5a, v gs =0v, - 165 - ns q rr reverse recovery charge di/dt=-100a/s - 1420 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
AP08P20GP-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 3 6 9 12 15 0 3 6 9 12 15 18 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3 .0v 0 2 4 6 8 10 0 3 6 9 12 15 18 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = - 3 .0v 500 800 1100 1400 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-4a t c =25 0.4 0.9 1.4 1.9 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =- 4 a v g =-10v 0.3 0.7 1.1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
AP08P20GP-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0.1 1 10 100 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -160v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 1 2 3 4 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
AP08P20GP-HF marking information 5 part numbe r package code meet rohs requirement for low voltage mosfet only 08p20gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
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